A Combined In Situ Grazing Incidence Small Angle X-Ray Scattering and Grazing Incidence X-Ray Diffraction Study of the Growth of Ge Islands on Pit-Patterned Si(001) Substrates

摘要

The growth of Ge islands on a pit-patterned Si(001) template is investigated in situ, combining grazing incidence diffraction, multiple wavelength anomalous diffraction, and small angle scattering. This allows monitoring in situ the detailed structural and morphological evolutions of the pits, of the wetting-layer and of the nucleated islands on the pit-patterned Si(001) substrate. It is shown that after Si regrowth, the Si substrate displays {107} and {1111} facets. During the very first stages of Ge growth, the preliminary facets of the Si substrate are energetically unfavourable, and the pit facets break up into a rather complex pattern of {10n} and {11m} facets with n > 7 and m > 11. At 5 and 6 ML, intensity rods from {105} and {113}-type facets appear in the GISAXS images revealing the formation of pyramids and domes, respectively. The degree of ordering, the shape, strain and composition of the islands are characterized during the growth process to provide a detailed evolution of their structure and morphology.