Characterization of ErAs:GaAs and LuAs:GaAs Superlattice Structures for Continuous-Wave Terahertz Wave Generation through Plasmonic Photomixing

摘要

We investigate the impact of ErAs:GaAs and LuAs:GaAs superlattice structures with different LuAs/ErAs nanoparticle depositions and superlattice geometries on terahertz radiation properties of plasmonic photomixers operating at a 780-nm optical wavelength. Our analysis indicates the crucial impact of carrier drift velocity and carrier lifetime on the performance of plasmonic photomixers. While higher carrier drift velocities enable higher optical-to-terahertz conversion efficiencies by offering higher quantum efficiencies, shorter carrier lifetimes allow achieving higher optical-to-terahertz conversion efficiencies by mitigating the negative impact of destructive terahertz radiation from slow photocarriers and preventing the carrier screening effect.