Low temperature growth of ZnO thin film on Si(100) substrates by metal organic chemical vapor deposition

摘要

In recent years, wide band-gap semiconductor materials have attracted a great deal of attention for use in blue light-emitting and short-wavelength diodes. Additionally, due to its high conductance, chemical and thermal stability, and high piezoelectric coupling coefficient, ZnO is also used for piezoelectric devices, such as surface acoustic wave (SAW) devices [1] and bulk acoustic devices [2]. Various deposition techniques, including sputtering [3,4], pulsed laser deposition (PLD) [5,6], ion beam deposition [7], chemical vapor deposition (CVD) [8,9], atomic layer deposition (ALD) [10], metal-organic chemical vapor deposition (MOCVD) [11,12], and molecular bean epitaxy (MBE) [13] have been employed for the growth of ZnO films.