Metal induced crystallization (MIC) technique has been largely investigated for low temperature poly-silicon (LTPS) thin film transistor or solar cell application [1-4]. Aluminum is one of the metals used for MIC process, and the crystallization temperature of amorphous silicon (a-Si) as low as 150 ℃ has been reported [5]. Although the mechanism for lowering the crystallization temperature of a-Si:H by its contact with certain metals is not well understood, three main kinds of driving forces have been proposed to explain the MIC effect: (1) the diffusion of atoms due to the concentration gradient (2) the internal free energy gradient between a-Si and c-Si atoms and (30 external strains such as applied electric field or film stress.
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