Synthesis and characteristics of SrBi2Nb2O9 thin films using pulsed laser deposition combined with computer-aided process optimization

摘要

Since the pioneering work of Pazde Araujo el al. [1] ferroelectric thin films of the layered perovskite oxide family have received wide attention. These materials have become key candidates for a nonvolatile memory device because of their excellent fatigue resistance and electrical properties for subraicron thickness with the simple Pt electrode [2]. At present, the investigation on these materials has been focused mainly on the SrBi2Ta2O9 (SBT) thin film [3-5], and most work on SBT-based capacitors performed has involved the synthesis of SBT layers by sol-gel processing or metallorganic deposition. Therefore, it is desirable to study other members of the family such as SrBi2Nb209 (SBN) and explore other techniques, such as pulsed laser deposition. Until now, there have been no reports on pulsed laser deposition (PLD) of SBN thin films on platinized silicon substrates. In this letter, the synthesis and characteristics of the SBN thin film on Pt/Ti/SiO2/Si substrate using the PLD combined with computer-aided process optimization is reported.