首页> 外文期刊>Journal of Materials Science >OXIDATION OF SILICON NITRIDE UNDER STANDARD AIR OR MICROWAVE-EXCITED AIR AT HIGH TEMPERATURE AND LOW PRESSURE
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OXIDATION OF SILICON NITRIDE UNDER STANDARD AIR OR MICROWAVE-EXCITED AIR AT HIGH TEMPERATURE AND LOW PRESSURE

机译:高温低压下标准空气或微波激发空气下硅氮化物的氧化

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摘要

During the atmospheric re-entry of space shuttles, the thermal constraints due to the hypersonic velocity can lead to very extensive damage on materials of the protective heat shield (oxidation; thermal shock, etc.). In order to test the oxidation resistance of such materials, we have realized an experimental set-up called MESOX which associates a concentrated radiation solar furnace and a microwave generator. The maximal heat flux is 4.5 MW m(-2), and the temperature ranges up to 2500 K. The total pressure is in the range 10(2)-10(4) Pa. For silicon-based ceramics, it is necessary to have a good knowledge of the conditions for the existence of a protective silica layer. The determination of the transition between passive and active oxidation is done, in the case of sintered silicon nitride, under standard and microwave-excited air. [References: 37]
机译:在航天飞机重新进入大气层期间,由于超音速引起的热约束可能导致保护性隔热罩材料受到非常广泛的破坏(氧化,热冲击等)。为了测试此类材料的抗氧化性,我们已经实现了称为MESOX的实验装置,该装置将集中辐射太阳能炉和微波发生器结合在一起。最大热通量为4.5 MW m(-2),温度范围最大为2500K。总压力在10(2)-10(4)Pa范围内。对于硅基陶瓷,必须对存在二氧化硅保护层的条件有充分的了解。在烧结氮化硅的情况下,在标准和微波激发的空气下,确定了被动氧化和主动氧化之间的过渡。 [参考:37]

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