Dry Cleaning for Organic Contaminants on Si wafer using UV/O_3 and ECR Plasma

摘要

The problem of organic contamination is still there due to the outgassing from the plastic materials in the storage boxes. Such organic contaminants have deleterious effects not only on the gate oxide integrity, but also on the chemical vapor deposition steps. In this paper, we report the experimental results for the removal of the organic contaminants existing on wafer surfaces by UV/O_3 cleaning, ECR H_2 plasma and ECR O_2 plasma cleaning. After cleaning, Si wafers were analyzed by Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR) and Atomic Force Microscrope (AFM). The ECR oxygen plasma cleaning technique seems to be more effective than the ECR hydrogen plasma or the UV/O_3 cleaning technique for the removal of organic contaminants. Also, organic contaminants removal mechanisms of UV/O_3 cleaning, ECR H_2 plasma and ECH O_2 plasma cleaning are discussed.