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Wafer surface cleaning for silicon homoepitaxy with and without ECR hydrogen plasma exposure

机译：晶片表面清洁硅同质外延，有和没有ECR氢等离子体暴露

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by Hyoun-woo Kim.

机译：金贤佑

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作者
Kim Hyoun-woo;
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年度 1994
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原文格式 PDF
正文语种 en_US
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1. Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O_3 and ECR oxygen plasma cleaning methods [J] . Kyunsuk Choi, Tae-Jong Eom, Chongmu Lee Thin Solid Films . 2003,第1a2期

机译：比较UV / O_3和ECR氧等离子体清洗方法对塑料盒中存储的硅晶片上有机污染物的去除效率
2. Investigation of Low-Temperature Hydrogen Plasma-Etching Processes for Silicon Wafer Solar Cell Surface Passivation in an Industrial Inductively Coupled Plasma Deposition Tool [J] . Tang Muzhi, Ge Jia, Wong Johnson, Photovoltaics, IEEE Journal of . 2016,第1期

机译：工业电感耦合等离子体沉积工具中用于硅晶片太阳能电池表面钝化的低温氢等离子体刻蚀工艺的研究
3. Evaluation of the Topographical Surface Changes of Silicon Wafers after Annealing and Plasma Cleaning [J] . Stach Sebastian, Talu Stefan, Dallaev Rashid, Silicon . 2020,第11期

机译：退火和等离子体清洗后硅晶片的地形表面变化的评价
4. Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth [C] . Hyoun Woo Kim Pacific Rim International Conference on Advanced Materials and Processing(PRICM 5) pt.5 . 2005

机译：ECR氢等离子体对硅衬底的表面清洁作用对随后的同质外延生长的影响
5. Characterization of the growth of aluminum nitride and gallium nitride thin films on hydrogen etched and/or cleaned hydrogen-6-silicon carbide(0001) surfaces. [D] . Hartman, Jeffrey David. 2000

机译：表征氢蚀刻和/或清洁的氢-6-碳化硅（0001）表面上氮化铝和氮化镓薄膜的生长。
6. Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface [O] . Manuel Alejandro Perez-Guzman, Rebeca Ortega-Amaya, Yasuhiro Matsumoto, 2018

机译：碳化硅-碳化硅纳米粒子在硅晶片表面的生长和自组装成蠕虫状纳米杂化结构。
7. HF vapor etching and cleaning of silicon wafer surfaces [O] . Han Yong-Pil 1962- 1999

机译：HF蒸汽蚀刻和硅晶片表面的清洁

Wafer surface cleaning for silicon homoepitaxy with and without ECR hydrogen plasma exposure

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