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Effect of of Polishing Process of a Semiconductor Wafer on the Fracture Mechanics of Diced Chips

机译:半导体晶片抛光工艺对切丁芯片断裂力学的影响

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This article shows how the adoption of polishing as the back-lapping process of semiconductor wafers influences the flexural fracture strength of their individually diced chips. According to the experimental results of this study, a polishing powder with a particle size of approximately 1 urn in diameter can meaningfully reduce the fracture strength of chips with a thickness of 50 urn. Particularly, when the diced chips have polishing-induced defects formed along a (110)-dicing plane, they reveal the lowest fracture strength. An in-situ examination details how polishing causes sharp notches on the back surface of the chips which provide preferential sites for chip cracking during a flexural test.
机译:本文说明了采用抛光作为半导体晶片的后搭接工艺如何影响其单独切块的芯片的弯曲断裂强度。根据这项研究的实验结果,粒径约1微米的抛光粉可以有效地降低厚度为50微米的切屑的断裂强度。特别地,当切块的芯片具有沿(110)切块平面形成的抛光引起的缺陷时,它们显示出最低的断裂强度。现场检查详细说明了抛光如何在切屑的背面形成尖锐的凹口,从而在弯曲测试期间为切屑的破裂提供了优先位置。

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