抛光垫使用寿命对硅单晶片抛光质量影响的研究

摘要

化学机械抛光技术已经在超大规模集成电路制造中得到广泛应用，主要用于加工超光滑无损伤的硅单晶衬底和对晶片进行局部和全局平坦化。虽然在化学机械抛光技术中影响硅片抛光效果的因素有很多，但抛光垫是影响抛光效果的关键因素之一。研究了抛光垫使用时间和相应时间硅片的抛光效果之间的关系，指出可通过在抛光过程中控制抛光垫的使用时间，对抛光的工艺参数进行更好的调整。%Chemical Mechanical Polishing(CMP)has been widely used in the manufacturing of ultra large scale integrated circuit,which is mainly used in machining super smooth silicon substrate without damage and the local and global planari-zation of wafer.Many factors have influence on the polishing quality of silicon wafers andpolishing pad is one of the key factors.In this paper,the relationship between polishing pad using time and the corresponding time of silicon wafer polish-ing quality has been explored.It is believed that better technological parameters can be achieved by controlling the polishing pad using time in the polishing process.