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Modeling pad wear and pad conditioning in chemical-mechanical polishing using population balance model.

机译:使用总体平衡模型对化学机械抛光中的垫磨损和垫修整进行建模。

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摘要

Chemical mechanical planarization (CMP) has become the leading planarization technology in integrated circuit manufacturing. The CMP process is highly dependent on the surface condition of the pad. The height distribution of the pad asperities (PDF) together with the process conditions determines the chemical-mechanical removal rate and within wafer nonuniformity (WIWNU) as well as defects in the form of scratches. Understanding the asperity height distribution during polishing and conditioning is important in controlling many aspects of CMP and forms the basis of this dissertation.;This dissertation attacks the problem of predicting the pad asperity PDF by considering the effects of pad asperity wear due to contact with the wafer and the generation of asperities during pad conditioning. In CMP, the aggressiveness (pad cut-rate) of the conditioner should overcome the CMP pad wear-rate during the in situ conditioning in order to sustain a stable polish-rate. In this work, a population balance model (PBE) for pad asperities is used to model the pad wear and pad conditioning processes. Fluid mechanics is built into the pad wear model. Pad plastic deformation and variable diamond height for the conditioner are built into the conditioner model that have not been done in previous works. The results with variable diamond height show that the conditioned pad asperity PDF is Gaussian. The variance of the conditioned pad asperity PDF is decided by the variance of the cutting diamonds (active diamonds). The model results also show that a different interface gap between the conditioner and pad will give a different standard deviation of the resulting conditioned pad asperity PDF if the conditioner diamond height PDF is Gaussian. This is consistent with the experimental findings that with increasing load, the roughness of the conditioned pad asperity PDF increases. Model results in this work show that it is caused by the decreasing of the interface gap between the rough surface of the conditioner diamonds and the pad surface resulting in the change of the roughness of the active diamonds. Analytical solutions are also derived and found matching the Monte Carlo numerical results.
机译:化学机械平面化(CMP)已成为集成电路制造中领先的平面化技术。 CMP工艺高度依赖于垫的表面状况。焊盘粗糙的高度分布(PDF)以及工艺条件决定了化学机械去除率,晶圆内不均匀性(WIWNU)以及划痕形式的缺陷。了解抛光和修整过程中的粗糙高度分布对于控制CMP的许多方面都很重要,并构成了本论文的基础。本论文通过考虑由于接触抛光垫引起的抛光垫粗糙磨损的影响,解决了预测抛光垫粗糙度PDF的问题。晶片和焊盘修整过程中粗糙的产生。在CMP中,修整剂的侵蚀性(抛光垫切割速率)应克服原位修整期间的CMP抛光垫磨损率,以维持稳定的抛光速率。在这项工作中,用于垫粗糙的总体平衡模型(PBE)用于对垫磨损和垫处理过程进行建模。流体力学内置于摩擦垫磨损模型中。护发素模型中的填充塑料变形和可变的金刚石高度已内置在护发素模型中,而以前的工作尚未完成。金刚石高度可变的结果表明,经调节的抛光垫粗糙度PDF是高斯型的。调节后的垫子粗糙度PDF的差异由切割钻石(活性钻石)的差异决定。模型结果还显示,如果修整器的钻石高度PDF为高斯,则修整器与护垫之间的不同界面间隙将为所得的经修整的护垫粗糙度PDF提供不同的标准偏差。这与实验结果相一致,即随着负载的增加,调节过的焊盘粗糙度PDF的粗糙度会增加。这项工作中的模型结果表明,这是由于修整钻石的粗糙表面与抛光垫表面之间的界面间隙减小而引起的,从而导致活性钻石的粗糙度发生了变化。还导出了解析解,并找到了与蒙特卡洛数值结果匹配的解析解。

著录项

  • 作者

    Shi, Hong.;

  • 作者单位

    The University of Utah.;

  • 授予单位 The University of Utah.;
  • 学科 Engineering General.;Engineering Mechanical.;Engineering Chemical.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 198 p.
  • 总页数 198
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:42:34

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