Surface states and recombination loss on wet-chemically passivated Si studied by Surface Photovoltage (SPV) and Photoluminescence (PL)

摘要

The miniaturisation of circuit patterns and the increasing level of density, integration and performance require preparation of defect- and contamination-free thin-film structures with excellent electronic properties. The preparation and characterisation of extremely clean, smooth and undamaged silicon substrate surfaces are very important issues, because the interface takes up a greater part of the device. Interface defects, become increasingly more critical to quality of thin oxide, epitaxial, and passivation layers The further development of wet-chemical preparation methods aims to ultra-clean, very smooth and undamaged substrates with defined surface electronic properties and their passivation against native oxidation in clean-room atmosphere.