首页>
外国专利>
Method for revealing semiconductor surface damage using surface photovoltage (SPV) measurements
Method for revealing semiconductor surface damage using surface photovoltage (SPV) measurements
展开▼
机译:使用表面光电压(SPV)测量揭示半导体表面损伤的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The presence of crystallographic damage in a semiconductor surface region is determined by surface photovoltage (SPV) measurements. Deviations from the idealized straight line SPV plot of photon flux (I. sub.o) versus reciprocal absorption coefficient (.sup.-1) in upward- facing concave form are used as a criterion of surface quality. This criterion is used to determine the minimum etching required to remove the damaged surface.
展开▼