Non-Contact Cleaning Process for Post-CMP Copper

摘要

Cleaning is required following CMP (chemical mechanical planarization) to remove particles as vveM as metallic and organic contamination. Particle and contamination requirements tighten with each successive technology generation, and the cleaning of wafers becomes more complicated and more critical [1]. Smaller size particles must be removed from the wafer surface as Imewidths decrease while lower and lower contamination levels must be achieved as device electncal parameters tighten Metal contamination on the dielectric surface may cause dielectric leakage and any metals that affect the electrical properties of silicon must be removed from the surface.