Method and Composition for Post-CMP Cleaning of Copper Interconnects Comprising Noble Metal Barrier Layers

摘要

A composition and method comprising same for the post-chemical mechanical planarization (CMP) of substrates comprising copper and a noble metal, such as but not limited to, ruthenium is described herein wherein the composition controls and/or minimizes the corrosion of copper during the cleaning process. In one aspect, the composition comprises a compound comprising at least one group chosen from an amino acid group, a betaine group, and combinations thereof; optionally a pH modifier chosen from an organic acid, an organic base, or combinations thereof; optionally a surfactant; and optionally a chelating agent.