METHOD OF MANUFACTURING TaCN BARRIER LAYER IN COPPER METALLIZATION PROCESS AND COPPER METAL LAYER STRUCTURE WITH TaCN BARRIER LAYER

摘要

PROBLEM TO BE SOLVED: To enhance a copper diffusion preventive effect.;SOLUTION: In a copper metallization process in a semiconductor integrated circuit, TaCN is used as a barrier layer in order to prevent the diffusion of a copper metal layer. The TaCN is used as a target, N₂ and an inert gas are introduced, and a TaCN barrier layer is formed. The ratio of a flow rate of the N₂ to the inert gas is set at 0.06 to 0.13, or the concentration of N in the TaCN barrier layer is set at 12 to 30%, and the resistance and the copper diffusion preventive effect of the barrier layer are improved.;COPYRIGHT: (C)2003,JPO