A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon

摘要

Taking into account a wide variety of recent results from studies of silicon crystal growth and high temperature wafer heat treatments, a consistent picture of intrinsic point defect behavior is produced. The relevant point defect parameters: diffusivities, equilibrium concentrations and the details of the interaction of vacancies with oxygen are deduced. The experimental observations reviewed here include the properties of grown-in microdefects and vacancy-controlled oxygen precipitation effects in rapidly cooled wafers. These results are combined to produce a set of simple unified schematic diagrams which illustrate the key features of intrinsic point defect reaction during both crystal growth and wafer processing.