Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties

摘要

In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.