Molecular Beam Epitaxial Growth of HgCdTe on CdZnTe(311)B

摘要

A series of n-type, indium-doped Hg_(1-x)Cd_(x)Te (x～0.225) layers were grown on Cd_(0.96)Zn_(0.04)Te(311)B substrates by molecular beam epitaxy (MBE). The Cd_(0.96)Zn_(0.04)Te(311)B substrates (2 cm×3 cm) were prepared in this laboratory by the horizontal Bridgman method using double-zone-refined 6N source materials. The Hg_(1-x)Cd_(x)Te(311)B epitaxial films were examined by optical microscopy, defect etching, and Hall measurements. Preliminary results indicate that the n-type Hg_(1-x)Cd_(x)Te(311)B and Hg_(1-x)Cd_(x)Te(211)B films (x～0.225) grown by MBE have comparable morphological, structural, and electrical quality, with the best 77 K Hall mobility being 112,000 cm~(2)/V·sec at carrier concentration of 1.9×10~(+15) cm~(-3).