Structural Properties of Ultrasonically Sprayed Al-Doped ZnO (AZO) Thin Films: Effect of ZnO Buffer Layer on AZO

摘要

Transparent aluminium-doped ZnO (AZO)-conducting oxide films were deposited on a glass substrate, using an ultrasonic spray pyrolysis (USP) system at 475A degrees C. We investigated the effects of the Al/Zn atomic ratios on the structural properties of the AZO films. All the deposited AZO thin films presented hexagonal wurtzite structure. As Al doping increased in the film, the preferential orientation switched from [002] to [101], and crystallite sizes varied from 31.90 nm to 34.5 nm. Field emission scanning electron microscopy showed a change in the surface morphology of the AZO films with respect to the Al/Zn ratio, and secondary ion mass spectroscopy showed that the amount of Al incorporated into the films was proportional to the concentration of the starting solution. A fast Fourier transform of the AZO film measurements confirmed the presence of (100), (102), and (200) reflections, corresponding to a wurtzite structure of the AZO thin films. The plane corresponding to AZO was simulated, and matched the experimental pattern obtained from high-resolution transmission electron microscopy. An un-doped ZnO layer was deposited onto the AZO film using USP at 400A degrees C, and a bilayer of AZO/ZnO was annealed in vacuum for 20 min at 350A degrees C. The resistivity of these bilayer films was lower than that of a single-layered AZO film, and it further decreased by vacuum annealing.