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首页> 外文期刊>Journal of Electronic Materials >Abrasive-Free Chemical Mechanical Polishing of Hard Disk Substrate with Cumene Hydroperoxide-H2O2 Slurry
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Abrasive-Free Chemical Mechanical Polishing of Hard Disk Substrate with Cumene Hydroperoxide-H2O2 Slurry

机译:异丙苯过氧化氢-H2O2浆料对硬盘基板的无磨料化学机械抛光

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摘要

With magnetic heads operating closer to hard disks, the hard disks must be ultra-smooth. The abrasive-free polishing (AFP) performance of cumene hydroperoxide (CHP) as the initiator in H2O2-based slurry for hard disk substrate was investigated in our work, and the results showed that the slurry including CHP could improve the material removal rate (MRR) and also reduce surface roughness. Electron spin-resonance spectroscopy (EPR), electrochemical measurement and Auger electron spectroscopy (AES) were conducted to investigate the acting mechanism with CHP during the polishing process. Compared with the H2O2 slurry, the EPR analysis shows that the CHP-H2O2 slurry provides a higher concentration of the HOO free radical. In addition, the AES analysis shows the oxidization reaction occurs in the external layer of the substrate surface. Furthermore, electrochemical measurements reveal that CHP can promote the electrochemical effect in AFP and lead to the increase of MRR.
机译:由于磁头在靠近硬盘的地方工作,因此硬盘必须超光滑。在我们的工作中研究了氢过氧化枯烯(CHP)作为引发剂在硬盘基板上的H2O2基浆料中的无磨料抛光(AFP)性能,结果表明,含CHP的浆料可以提高材料去除率(MRR) ),并减少表面粗糙度。进行了电子自旋共振光谱(EPR),电化学测量和俄歇电子能谱(AES)研究了CHP在抛光过程中的作用机理。与H2O2浆料相比,EPR分析表明CHP-H2O2浆料可提供更高浓度的HOO自由基。另外,AES分析表明氧化反应发生在基材表面的外层中。此外,电化学测量表明,CHP可以促进AFP中的电化学作用并导致MRR的增加。

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