OPTICAL MODULATION OF THE EFFECTIVE CHANNEL THICKNESS IN GaAs FIELD EFFECT TRANSISTORS WITH A SCHOTTKY GATE (MESFETs)

摘要

Using a model relating the change in drain current with modulation of the effective channel thickness upon IR illumination of GaAs field effect transistors with a Schottky gate (MESFETs), it is shown that it is possible to determine the change in channel thickness and the concentration profile for deep centers in an FET channel. Profiles are given for the distribution of deep centers in the channels of GaAs MESFETs with different noise temperatures.