XAFS Studies of Self-Aligned Platinum Silicide Thin Films at the Pt M3,2 EDge and the Si K-Edge

摘要

Pt-Si thin films with the thickness of several hundred A prepared on n-type Si(100) by UHV sputter-deposition procedures and subsequent annealing have been studied with X-ray absorption line structure spectroscopy at the Pt Mu edge and the Si K-edge. It is found that, under favourable conditions, single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk samples. The Mj; edge exhibits XANES features very similar to those of the Pt L13 edge obtained from the samples. The analysis of the Pt Mit edge whtleline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidslion.