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首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >XAFS Studies of TiSi2 and CoSi2 Thin Films at the Ti, Co and Si K-Edge
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XAFS Studies of TiSi2 and CoSi2 Thin Films at the Ti, Co and Si K-Edge

机译:Ti,Co和Si K边缘的TiSi2和CoSi2薄膜的XAFS研究

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摘要

XAFS measurements at the metal and Si K-edge have been made for a series of TiSi, and CoSi2 blanket salicide films as well as bulk CoSij and TiSi2. It was found that the films have essentially the same structure as the bulk TiSi, and CoSij and that the Si XANES exhibit very rich structures. Both the materials characterization and spectroscopy aspects of the XAFS are discussed.
机译:已经针对一系列TiSi和CoSi2覆盖自对准硅化物膜以及块状CoSij和TiSi2在金属和Si K边缘进行了XAFS测量。发现膜具有与块状TiSi和CoSij基本相同的结构,并且Si XANES表现出非常丰富的结构。讨论了XAFS的材料表征和光谱学方面。

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