Nanocrystalline SiC layers produced by ion-beam-induced crystallization-morphology and resistivity

摘要

Ion-beam-induced crystallization was used to transform amorphized, heavily Al doped SiC layers to nanocrystalline material. The morphology of the as-implanted and the annealed layers was studied by XTEM. The electrical properties were analyzed by sheet resistance and Hall measurements and compared with crystalline reference samples. A high-temperature annealing step is necessary to activate the implanted Al acceptor atoms. During annealing the mean grain size of the nanocrystals grow from 3 to 35 nm. The Al doped, nanocrystalline SiC has a much lower sheet resistance than the crystalline reference samples. It was found that this is due to the enhanced hole concentration which could be explained by a higher solid solubility of Al in the nanocrystalline SiC.