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High pressure annealing of CVD diamond films

机译:CVD金刚石薄膜的高压退火

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CVD diamond films were annealed from 600 to 1900 deg C at 7.7 GPa in a toroidal high pressure (HP) apparatus,always inside the diamond-phase stability region. The annealed films were analyzed by Raman and infrared (IR) spectroscopy and the results showed that the diamond grains remained stable while the non-diamond carbon phases and impurities, responsible for the intricate film structure, changed after processing. For the HP annealing from 600 to 1300 deg C, there were no major changes in the Raman spectra of the film, however, the film became easily broken and the IR spectra indicated a high reactivity of carbon with chemical elements from the environment. After annealing at 1500 deg C and 7.7 GPa, the formation of diamond-like (DLC) and graphitic structures in-between the diamond grains were observed, while the reaction with the environment elements decreased. For higher temperatures, the DLC and graphitic structures persisted up to 1700 deg C and the film incorporated OH in large amounts. The results showed that the non-diamond carbon species are susceptible to the HP annealing,and structural modifications in between the diamond grains are significant for temperatures above 1300 deg C at 7.7 GPa.
机译:CVD金刚石薄膜始终在金刚石相稳定区域内,在环形高压(HP)设备中以7.7 GPa在600至1900℃退火。用拉曼光谱和红外光谱分析退火后的薄膜,结果表明,加工后,金刚石晶粒保持稳定,而负责复杂薄膜结构的非金刚石碳相和杂质发生了变化。对于从600到1300℃的HP退火,薄膜的拉曼光谱没有重大变化,但是,薄膜容易破裂,红外光谱表明碳与环境中的化学元素具有很高的反应性。在1500摄氏度和7.7 GPa下退火后,观察到在金刚石晶粒之间形成类金刚石(DLC)和石墨结构,同时与环境元素的反应减少。对于更高的温度,DLC和石墨结构持续到1700摄氏度,并且薄膜中大量掺入了OH。结果表明,非金刚石碳物种容易受到HP退火的影响,并且在7.7 GPa以上的温度下,高于1300℃时,金刚石晶粒之间的结构改变非常明显。

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