首页> 外国专利> Diamond thin film formation method by laser ablation combined with high voltage discharge plasma CVD and diamond bulk fabrication method under the conditions of high temperature and high pressure

Diamond thin film formation method by laser ablation combined with high voltage discharge plasma CVD and diamond bulk fabrication method under the conditions of high temperature and high pressure

机译:高温高压条件下激光烧蚀结合高压放电等离子体CVD形成金刚石薄膜的方法及金刚石块的制造方法

摘要

PURPOSE: A method for manufacturing a diamond thin film and a diamond bulk is provided to synthesize a bulk in a hydrogen gas atmosphere and at a high temperature and a high pressure by using a seed diamond thin film. CONSTITUTION: An ablation phenomenon which is generated when a laser beam(2) generated in a laser(1) is collected by a lens(3) and is irradiated to a high purity graphite is used. A discharging plasma(9) is generated between a graphite cathode(6) and a graphite anode(8). A diamond is formed on a substrate(11) which is positioned on the graphite anode(8) by a high temperature of a central portion of the discharging plasma(9). A hydrogen gas is supplied to a reactor(12).
机译:目的:提供一种用于制造金刚石薄膜和金刚石块的方法,以通过使用籽晶金刚石薄膜在氢气气氛中以及在高温和高压下合成块。组成:使用一种烧蚀现象,这种现象是在激光器(1)中产生的激光束(2)被透镜(3)收集并照射到高纯度石墨上时产生的。在石墨阴极(6)和石墨阳极(8)之间产生放电等离子体(9)。通过放电等离子体(9)的中心部分的高温,在位于石墨阳极(8)上的基板(11)上形成金刚石。将氢气供应到反应器(12)。

著录项

  • 公开/公告号KR20000036365A

    专利类型

  • 公开/公告日2000-07-05

    原文格式PDF

  • 申请/专利权人 KIM JONG IL;

    申请/专利号KR20000009242

  • 发明设计人 KIM JONG IL;

    申请日2000-02-24

  • 分类号H01L21/26;

  • 国家 KR

  • 入库时间 2022-08-22 01:45:40

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号