Diamond-like carbon films deposited using a broad, uniform ion beam from an RF inductively coupled CH{sub}4-plasma source

摘要

Diamond-like carbon (DLC) films with 12-25 GPa hardnesses and 3-400 nm thicknesses weredeposited on silicon, Al{sub}2O{sub}3-TiC substrates, and permalloy coated withAl{sub}2O{sub}3-TiC substrates using a broad, uniform ion beam from an RF, inductively coupled,CH{sub}4-plasma (ICP) source (30 cm). The deposition process represents a significant advance inthe ability to: (1) accomplish the desired balance between mechanical, optical and electricalproperties by utilizing different RF powers to vary the plasma density and electron temperature; (2)improve step coverage when the film is deposited on patterned or rough substrates; (3) carry outreliable fault-free and long duration operation. The RF inductively coupled ion beam source can beoperated with highly reactive ion beam processes for long periods of time. In particular, the sourcedemonstrates excellent compatibility with pure oxygen. The ability of an O{sub}2 -plasma to etchhydrocarbon precipitates allowed us to utilize this procedure as an effective "on-line" ion sourceclean-up. Highly reproducible deposition rates (<5% from run to run for over several hundred hours)have been achieved by utilizing a CH{sub}4-plasma conditioning procedure for the plasma-surfaceinteraction stabilization. The deposition uniformity was within 5% over 9 in. Deposition kinetics aswell as the mechanical and electrical properties have been investigated and discussed.