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EELS and NEXAFS structural investigations on the effects of the nitrogen incorporation in a-CN_x films deposited by r.f. magnetron sputtering

机译:EELS和NEXAFS的结构研究,研究了r.f.沉积的a-CN_x膜中氮掺入的影响。磁控溅射

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摘要

This work presents the changes induced at the nanometer scale by the nitrogen incorporation into amorphous carbon nitride a-CN_x. films deposited by radio-frequency (r.f.) magnetron sputtering. High N content films (20 to 33 at. percent) have been analysed by electron energy loss spectroscopy (EELS) and by near edge X-ray absorption fine structure (NEXAFS). EELS spectra at C K and N K edges roughly indicate the increase of the corresponding pi~* features, associated to N sp~2 and C sp~2 bonds, vs. the N content. Fine structures of the pi~* region of the N K edge spectra show at least three contributions, with different evolution depending on the N content. The discrepancies between the results recorded by these two techniques are only outward and they can be explained by the influence of the plasma parameters (pressure lying from 0.5 to 13 Pa and various Ar/N_2 mixtures) on the deposition process. All the results are in good agreement with the XPS analysis of the N 1s data.
机译:这项工作提出了由于氮掺入非晶氮化碳a-CN_x而在纳米尺度上引起的变化。射频(r.f.)磁控管溅射沉积的薄膜。高氮含量的薄膜(20至33 at。%)已通过电子能量损失谱(EELS)和近边缘X射线吸收精细结构(NEXAFS)进行了分析。 C K和N K边缘处的EELS光谱大致表明与N sp〜2和C sp〜2键有关的相应pi〜*特征的增加。 N K边缘光谱的pi〜*区的精细结构显示出至少三个贡献,取决于N含量的变化不同。这两种技术记录的结果之间的差异仅是向外的,并且可以通过等离子体参数(压力介于0.5 Pa至13 Pa和各种Ar / N_2混合物)对沉积过程的影响来解释。所有结果与N 1s数据的XPS分析完全吻合。

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