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Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
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机译:通过反应性射频沉积气定时的氮氧化膜的方法磁控溅射
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摘要
A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen/argon is at least 0.02, the flow rate ratio of oxygen/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.
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机译:使用反应性射频磁控溅射在玻璃和柔性基板上沉积金属氧氮化物和过渡金属氧氮化物(M x Sub>(ON) y Sub>)膜的气时控制方法基板加热。一种系统,包括溅射室,基板,靶材,三个质量流量控制器,分别交替和间歇地控制氩气,氮气和氧气的流量,并进入溅射室,并在溅射室中照射以分解的13.56 MHz射频发生器溅射气体。氧气+氮气/氩气的流量比至少为0.02,氧气/氮气的流量比至少为0.01,并且氩气,氮气和氧气交替或混合进入溅射室的顺序时间至少为1秒。
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