Epitaxial growth of #beta#-SiC on Si (100) by low energy ion beam deposition

摘要

Epitaxial #beta#-silicon carbide (SiC) films on mirror-polished (100) Si substrates were deposited using low energy (150 eV) ion beam modification at efferent ion doses (1 X 10~(17)/cm~2, 1 X 10~(18)/cm~2, 1 X 10~(19)/cm~2). The Si substrates were exposed to a broad ion beam of hydrocarbon, argon, and hydrogen ions, generated in a Kaufman ion source. These ions reacted with the Si substrates and formed the epitaxial #beta#-SiC films. Amorphous carbon films were generated on top of #beta#-SiC film. By studying the ion dose dependence of the quality and thickness of the SiC and amorphous carbon films, we suggest that the formation of the epitaxial #beta#-SiC was driven by thermal diffusion of Si atoms in SiC and preferential etching of non-epitaxial SiC crystals by H ions.