DEPOSITION METHOD BY EPITAXIAL GROWTH, AND EPITAXIAL GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide stable high-speed growth while securing deposition quality from a view point of film thickness distribution, resistivity distribution and the like, in deposition by epitaxial growth.SOLUTION: In an epitaxial growth device 1, when a reaction chamber 2 demarcated by a ceiling plate 21 on an upper surface, a substrate mounting part 3 on a lower surface, and a side wall part 4 on a lateral surface is configured, a supporting part 22 is made to support the ceiling plate 21 from an upper part and the outside of a peripheral edge part, at the peripheral edge part of the ceiling plate 21. In a reaction gas supply path 41 provided in the side wall part 4, reaction gas is rectified so that a horizontal direction component in a flowing direction of the reaction gas in the reaction chamber 2 accords with a horizontal direction component in a direction from a center of an opening of the reaction gas supply path 41 on a reaction chamber 2 side toward a center of the reaction chamber 2.SELECTED DRAWING: Figure 1