Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR-r.f. nitrogen plasma

Hong Junegie

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Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR-r.f. nitrogen plasma

机译：在双ECR-r.f中蚀刻氢化非晶碳（a-C：H）薄膜的过程。氮等离子体

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来源
《Diamond and Related Materials》 |1999年第2amara期|共5页
作者
Hong Junegie;
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正文语种 eng
中图分类电热工业、高温制品工业;第Ⅳ族非金属元素及其无机化合物;人造宝石、合成宝石的生产;
关键词
Amorphous hydrogenated carbon; Dual ECR-r.f. plasma; Nitrogenated carbon film; Surface characterization;

机译：非晶态氢化碳;双ECR-r.f。等离子体;氮化碳膜;表面表征;

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专利

1. Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR-r.f. nitrogen plasma [J] . Hong Junegie Diamond and Related Materials . 1999,第2aMara期

机译：在双ECR-r.f中蚀刻氢化非晶碳（a-C：H）薄膜的过程。氮等离子体
2. Optical Characterization of Amorphous Hydrogenated Carbon (a-C:H) Thin Films Prepared by Single RF Plasma Method [J] . Mansuroglu Dogan, Goksen Kadir, Bilikmen Sinan Plasma Science & Technology . 2015,第6期

机译：单射频等离子体法制备非晶氢化碳（a-C：H）薄膜的光学表征
3. Optical Characterization of Amorphous Hydrogenated Carbon (a-C:H) Thin Films Prepared by Single RF Plasma Method [J] . Dogan MANSUROGLU, Kadir GOKSEN, Sinan BILIKMEN 等离子体科学和技术（英文版） . 2015,第006期

机译：单射频等离子体法制备非晶氢化碳（a-C：H）薄膜的光学表征
4. Amorphous Hydrogenated Carbon Films Deposited by PECVD: Nitrogen Incorporation during Film Growth and by Plasma Surface Processing [C] . F. L. Freire Jr. International Congress on Plasma Physics . 2003

机译：通过PECVD沉积的无定形氢化碳膜：薄膜生长期间氮气掺入，等离子体表面处理
5. Investigation of the film properties and deposition process of hydrogenated amorphous carbon films deposited with a microwave ECR plasma reactor. [D] . Kim, Bo Keun. 2000

机译：用微波ECR等离子体反应器沉积氢化非晶碳膜的膜性能和沉积过程的研究。
6. Refinement of Sustainable Polybutylene Adipate Terephthalate (PBAT) with Amorphous Hydrogenated Carbon Films (a-C:H) Revealing Film Instabilities Influenced by a Thickness-Dependent Change of sp2/sp3 Ratio [O] . Torben Schlebrowski, Halima Acharchi, Barbara Hahn, 2020

机译：非晶氢化碳膜（a-C：H）精制可持续的聚己二酸对苯二甲酸丁二醇酯（PBAT）揭示了膜厚度随sp2 / sp3比率变化而变化的不稳定性
7. The structural and optical properties of hydrogenated amorphous carbon (a-C:H) thin films deposited using a direct current-plasma enhanced chemical vapour deposition (DC-PECVD) technique [O] . Abu Bakar Suriani 2005

机译：使用直流等离子体增强化学气相沉积（DC-PECVD）技术沉积的氢化非晶碳（a-C：H）薄膜的结构和光学性质

Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR-r.f. nitrogen plasma

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