A Raman spectroscopic analysis of thin carbon films deposited onto curved Ti6Al4V substrates with and without silicon adhesion layers

摘要

We determine the Raman spectra corresponding to a number of thin-film-carbon/substrate systems. The process of baseline correction and means of peak fitting are discussed. It is observed that the traditional two-peak fit, with both D- and G-peaks, leads to deviations between the fit and the baseline corrected experimental data considered in this analysis. A third peak at 1490 cm(-1), which we refer to as the S-peak, is introduced in order to create a more satisfying fit with the results of experiment. The Raman spectrum of the thin-film-carbon/substrate system grown through the use of a silicon interlayer at higher deposition pressures (between 300 and 400 mTorr) is found to exhibit a peculiar nature, wherein its baseline must be determined through means that deviate from the norm. We have acquired evidence, although this is not explicitly shown within this paper, that suggests that this peculiarity may be due to the higher deposition pressures that are employed for the sample preparations considered for the purposes of this analysis. (C) 2016 Elsevier B.V. All rights reserved.