Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method

摘要

Using lift-off method, we synthesized large self-standing plasma CVD diamond films on various substrates. Charge carrier transportation in diamond was measured using a particle measurements and TOF methods with a short-pulsed UV laser. The high-quality films were synthesized rapidly. We observed the maximum transit time of holes and electrons shorter than 5 ns. The lift-off method is useful to fabricate the high-quality diamond with excellent drift velocities of the charge carrier. The charge transport characteristics of our diamond films are comparable to those of a commercially available (Element Six Ltd.) electronics grade IIa diamond single crystal.