首页> 外国专利> PRODUCTION PROCESS FOR LARGE AREA CVD DIAMOND SINGLE CRYSTAL AND LARGE AREA CVD DIAMOND SINGLE CRYSTAL OBTAINED BY THE PROCESS

PRODUCTION PROCESS FOR LARGE AREA CVD DIAMOND SINGLE CRYSTAL AND LARGE AREA CVD DIAMOND SINGLE CRYSTAL OBTAINED BY THE PROCESS

机译:大面积CVD金刚石单晶的生产工艺及该工艺获得的大面积CVD金刚石单晶的生产工艺

摘要

PROBLEM TO BE SOLVED: To provide a high quality CVD diamond single crystal having a large area and no depressions, and a production process for obtaining the same.;SOLUTION: The process comprises arranging not less than 4 diamond single crystal substrates having the principal plane of {100} with their {100} sides adjacent to each other, growing diamond on the principal planes of the arranged single crystal substrates by means of gas phase synthesis and removing the single crystal substrates to obtain a piece of a large area CVD diamond single crystal. Given unit A consists of two optionally selected adjacent single crystal substrates: A1 and A2, and unit B consists of the two other adjacent single crystal substrates: B1 and B2 in the four adjacent single crystal substrates. The diamond single crystal substrates are arranged in a way that the surfaces of the opposite sides of A and B are each on the same plane and the surface central to the distance between the sides where A1 and A2 are faced and the surface central to the distance between the sides where B1 and B2 are faced are shifted in the direction of the surface where the unit A faces the unit B.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种具有大面积且无凹陷的高质量CVD金刚石单晶及其制造方法。解决方案:该方法包括布置不少于4个具有主面的金刚石单晶衬底。使{100}的{100}侧彼此相邻,通过气相合成在排列的单晶衬底的主面上生长金刚石,并去除单晶衬底以获得一块大面积CVD金刚石单晶水晶。给定的单元A由两个可选的相邻单晶衬底:A1和A2组成,单元B由两个其他相邻的单晶衬底:四个相邻的单晶衬底中的B1和B2组成。金刚石单晶衬底的布置方式是,A和B的相对侧的表面均在同一平面上,并且该表面以A1和A2面对的侧面之间的距离为中心,并且该表面以该距离为中心面向B1和B2的侧面之间的距离在单元A面向单元B的表面方向上移动。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012111653A

    专利类型

  • 公开/公告日2012-06-14

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP20100261013

  • 申请日2010-11-24

  • 分类号C30B29/04;C23C16/27;C01B31/06;C23C16/01;H01L21/205;H01L21/314;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:09

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