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CVD diamond single crystal and single crystal diamond tools

机译:CVD金刚石单晶和单晶金刚石工具

摘要

A diamond single crystal according to the present invention is a diamond single crystal synthesized using a chemical vapor synthesis method and has an absorption coefficient of 25 cm -1 or more and 80 cm -1 or less for light having a wavelength of 350 nm. A method for producing a diamond single crystal according to the present invention includes implanting an ion other than carbon into a main surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the main surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted main surface of the seed substrate using a chemical vapor synthesis method under synthesis conditions where the ratio N C /N H of the number of carbon-containing molecules N C to the number of hydrogen molecules N H in a gas phase is 10% or more and 40% or less, the ratio N N /N C of the number of nitrogen molecules N N to the number of carbon-containing molecules N C in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850°C or more and less than 1000°C.
机译:根据本发明的金刚石单晶是使用化学气相合成法合成的金刚石单晶,并且对于波长为350nm的光具有25cm -1以上且80cm -1以下的吸收系数。根据本发明的用于制造金刚石单晶的方法包括将除碳以外的离子注入到金刚石单晶种衬底的主表面中,从而降低具有800nm波长的光的透射率。相对于{100}平面倾斜7度或更小角度,并在化学成分为NC / NH的合成条件下,使用化学气相合成法在晶种衬底的离子注入主表面上同质外延生长金刚石单晶气相中含碳分子NC的数量相对于氢分子NH的数量的比率为10%以上且40%以下,氮分子NN的数量相对于含碳数的比率NN / NC气相中的分子NC为0.1%以上且10%以下,且种子基板温度T为850℃以上且小于1000℃。

著录项

  • 公开/公告号JP6536847B2

    专利类型

  • 公开/公告日2019-07-03

    原文格式PDF

  • 申请/专利权人 住友電気工業株式会社;

    申请/专利号JP20170188360

  • 发明设计人 植田 暁彦;西林 良樹;角谷 均;

    申请日2017-09-28

  • 分类号C30B29/04;C23C16/27;B23B27/14;B23B27/20;

  • 国家 JP

  • 入库时间 2022-08-21 12:20:19

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