Investigation on surface of boron-doped CVD diamond by cathodoluminescence spectroscopy

摘要

Boron-doped polycrystalline and homoepitaxial CVD diamond films were investigated bycathodoluminescence (CL) spectroscopy. By CL imaging and by variation in the electron penetrationdepth, segregation of the 535 nm luminescence center at the growth surface and the interface ofSi/diamond was confirmed. After etching by hydrogen plasma, or oxidization by annealing or plasma,the segregation of the 535 nm center still remained. Annealing in oxygen or oxidization by plasmainduced the broad emission band at 500 nm enhanced in a near surface layer of electron penetrationdepth for 3-5 kV. The 500 nm band appeared remarkably in thin B-doped films with a large quantityof grain boundaries. The bulging of the 500 nm band was not observed in either homoepitaxial filmsor undoped films.