Technology and performance of 150nm gate length InGaP/InGaAs/GaAs pHEMTs

摘要

The technology and performance of 150 nm gate length InGaP/InGaAs/GaAS pseudomorphic HEMTs based on a very narrow InGaAs channel are presented. DC characterization in the temperature range between 300 and 77 K is performed to explain some anomalous effects in the device low-temperature performance. In addition to DC characterization, high-speed operation of this device is investigated. Current gain cut-off frequency (f{sub}t) and maximum oscillation frequency f{sub}max were found to be 53 and 150GHz, respectively.