Carrier Velocity Considerations of Waveguide-Separate Absorption Charge Multiplication Avalanche Photo-Diode (WG- SACM-APD) InGaAs/InP Structures

摘要

An important device for photo-detection purposes is a waveguide avalanche photodiode (WG-APD) which in this paper we present a model for an InGaAs/InP with separate absorption, charge and multiplication (SACM) regions. We studied the carrier velocity differences in the adjacent layers due to several effects, and we showed that there are some variations in the case of non equal carrier velocities, for the frequency response and bandwidths of the structure. We also found that one can assumed the same velocities for all layers if we choose an appropriate thickness for different layers. Indeed, we show that for low multiplication factors M{sub}0 there are similar results in two cases.