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SEPARATE ABSORPTION CHARGE AND MULTIPLICATION AVALANCHE PHOTODIODE STRUCTURE AND METHOD OF MAKING SUCH A STRUCTURE
SEPARATE ABSORPTION CHARGE AND MULTIPLICATION AVALANCHE PHOTODIODE STRUCTURE AND METHOD OF MAKING SUCH A STRUCTURE
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机译:单独的吸收电荷和乘法雪崩光电二极管结构及制造这种结构的方法
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摘要
One illustrative photodiode disclosed herein includes an N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.
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