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Diffusion maps based k-nearest-neighbor rule technique for semiconductor manufacturing process fault detection

机译:基于扩散图的k近邻规则技术在半导体制造过程故障检测中的应用

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摘要

In the semiconductor industry, traditional multivariate statistical process monitoring methods and pattern classification based detection methods have been developed to detect the semiconductor process faults. However, they do not show superior performance due to the limits of these methods and the unique characteristics of semiconductor processes such as non-linearity and multimodal batch trajectories. This paper presents a novel diffusion maps based k-nearest-neighbor rule (DM-kNN) technique that can reduce data-storage costs and enhance the performance of fault detection by integrating diffusion maps analysis with k-nearest-neighbor rule. DM-kNN takes full advantage of the dimensionality reduction and information preserving properties of DM to extract the low dimensional manifold feature that optimally preserves the intrinsic nonlinear structure of the data set. Then the adapted kNN rule based fault detection method is applied to the low dimensional manifold feature space to detect potential faults. The effectiveness and robustness of DM for dimensionality reduction and feature extraction are verified in simulation experiments compared with other linear and nonlinear dimensionality reduction methods. In addition, DM-kNN is applied to monitor the semiconductor manufacturing process. The fault detection results of the proposed method are demonstrated to be superior to those of the MPCA, FD-kNN, PC-kNN and FS-KNN approaches. (C) 2014 Elsevier B.V. All rights reserved.
机译:在半导体工业中,已经开发了传统的多元统计过程监控方法和基于模式分类的检测方法来检测半导体工艺故障。但是,由于这些方法的局限性以及诸如非线性和多峰批次轨迹之类的半导体工艺的独特特性,它们并未显示出卓越的性能。本文提出了一种新的基于扩散图的k最近邻规则(DM-kNN)技术,该技术可以通过将扩散图分析与k最近邻居规则相结合来降低数据存储成本并提高故障检测的性能。 DM-kNN充分利用了DM的降维和信息保留特性,以提取低维流形特征,从而最佳地保留了数据集的固有非线性结构。然后将基于自适应kNN规则的故障检测方法应用于低维流形特征空间,以检测潜在故障。与其他线性和非线性降维方法相比,仿真实验证明了DM在降维和特征提取方面的有效性和鲁棒性。此外,DM-kNN还用于监控半导体制造过程。结果表明,该方法的故障检测结果优于MPCA,FD-kNN,PC-kNN和FS-KNN方法。 (C)2014 Elsevier B.V.保留所有权利。

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