Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

摘要

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.