Ag掺杂对n-ZnO纳米棒/p-GaN异质结结构和发光性能的影响

摘要

1D Ag-doped ZnO nanorods (NRs) have been synthesized on p-GaN films using a facile hydrothermal method,and investigated the effect of the Ag doping on the morphology and structure of the NRs and the optical performances of the n-ZnO NRs/p-GaN heterojunction.The results show that the section of ZnO nanorods is hexagon and ZnO nanorods were vertically grown on the p-GaN film.The XRD analysis shows that the (002) peak of the 1D ZnO NRs shifted toward a lower 2θ with increasing the Ag content,indicating that the substitution of the Ag ions with the Zn ions leads to expansion of the ZnO lattice.With the increase of Ag doping concentration,the near band edge emission peak of ZnO nanorods shows a redshift,the intensity of near band edge emission peak weakened gradually and the intensity of yellow band emission peak has the opposite trend,and n-ZnO nanorods/p-GaN heterojunction reveals a better transmission efficiency.%利用简单的水热合成法在p-GaN薄膜上制备了Ag掺杂的一维ZnO纳米棒(ZnO NRs),并且研究了Ag掺杂对于ZnO NRs结构和形貌以及n-ZnO NRs/p-GaN异质结发光特性的影响.结果表明,不同Ag掺杂浓度的ZnO纳米棒截面均呈六边形的棒状结构,且纳米棒的取向垂直于衬底;XRD分析结果表明,随着Ag掺杂浓度的增加,ZnO纳米棒(0002)晶面的峰位向衍射角减小的方向移动,表明Ag+置换了ZnO晶格中的部分Zn2+后使其晶格常数略增加;随着Ag掺杂浓度的增加,ZnO纳米棒近带边发光峰发生一定的红移并且强度逐渐减弱,黄带发光峰逐渐增强,n-ZnO NRs/p-GaN异质结具有更好的传输效率.