Luminescence properties of Cu-ion-implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

摘要

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 x 10(14) ions/cm(2)) were implanted at room temperature in nondoped and Mg-doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 run in CVD-ZnO and at 450 nm in Mg-doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low-concentration region of CVD-ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 x 10(19) ions/cm(3) in CVD-ZnO and 5.6 x 10(18) ions/cm(3) in MZO thin films. Copyright (C) 2005 John Wiley & Sons, Ltd.