Plasma parameter and deposited films measurements in reactive SiH4 based electron cyclotron resonance plasmas

摘要

Plasma parameters of a reactive electron cyclotron resonance plasma for production of hydrogenated amorphous silicon films are measured in detail as a function of concentration of gas and microwave power, where SiH4 gas diluted in He or H-2 gas is used as the source gas. It is found that the electron temperature increases as the concentration of He is increased. Furthermore, hydrogenated amorphous silicon films are deposited on the substrate under the same conditions, and the deposition rate, optical band gap, photo-and dark-conductivity are investigated as a function of concentration and microwave power. The deposition rate of the films versus the gas mixture rate of SiH4/He shows a parabolic profile which is very different from that in the case of SiH4/H-2. (C) 1998 Elsevier Science S.A. [References: 11]