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Effect of surface roughness on the adhesion properties of Cu/Cr films on polyimide substrate treated by inductively coupled oxygen plasma

机译:表面粗糙度对电感耦合氧等离子体处理的聚酰亚胺基体上Cu / Cr膜附着性能的影响

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摘要

For fabrication of future flexible electronic devices on inexpensive and flexible organic substrates requiring a metallization process, the adhesion of metals to polymer substrate is a very critical issue in realizing required flexibility of metallization lines on the flexible substrates. In this work, effect of the surface morphological roughening and surface chemical modification of the PI surface on the adhesion properties of Cu(100 nm)/Cr(50 nm)/PI systems was investigated by varying the substrate bias power at the fixed top power (40 W) and o(2) flow rate (300 seem) in an inductively coupled plasma (ICP) treatment system. The results of contact angle measurements and atomic force microscopy (AFM) showed a large increase in surface roughness under the biased condition resulting in the dramatic decrease of contact angle, congruent to 0 degrees (a complete wetting). Analysis of chemical binding states and surface chemical composition by X-ray photoelectron spectroscopy (XPS) showed an increase in the formation of carbon-oxygen functional groups and the concentration of oxygen on the surface. T-peel test for adhesion strength measurement of Cu/Cr/PI systems showed the peel strength as high as congruent to 126 gf/mm, increased by a factor of 2.2 compared to that of the untreated sample. Observed dramatic increase in the adhesion strengths between PI and Cu/Cr films after plasma treatment at the substrate bias power of 125 W is attributed to a large surface roughness of PI induced by reactive etching in addition to the chemical modification of the plasma-treated PI surface. (c) 2005 Elsevier B.V. All rights reserved.
机译:为了在需要金属化工艺的廉价且柔性的有机衬底上制造未来的柔性电子设备,金属与聚合物衬底的粘合是在柔性衬底上实现所需的金属化线柔性的一个非常关键的问题。在这项工作中,通过在固定的顶部功率下改变基板偏置功率,研究了PI表面的表面形态粗糙化和表面化学改性对Cu(100 nm)/ Cr(50 nm)/ PI系统的附着性能的影响(40 W)和o(2)流速(300sccm)在感应耦合等离子体(ICP)处理系统中。接触角测量和原子力显微镜(AFM)的结果显示,在偏置条件下,表面粗糙度大大增加,导致接触角急剧减小,达到0度(完全润湿)。通过X射线光电子能谱(XPS)分析化学键合状态和表面化学成分,发现碳氧官能团的形成和表面氧的浓度增加。用于Cu / Cr / PI体系的粘合强度测量的T型剥离试验显示,剥离强度高达126 gf / mm,与未处理的样品相比,增加了2.2倍。在125 W的基板偏置功率下进行等离子处理后,观察到PI与Cu / Cr膜之间的粘合强度显着增加,这归因于除了化学处理的PI的化学改性外,反应性蚀刻还导致PI的表面粗糙度大表面。 (c)2005 Elsevier B.V.保留所有权利。

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