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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Electrical properties of transferred graphene films on pre-treated polyimide substrate by inductively coupled plasma
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Electrical properties of transferred graphene films on pre-treated polyimide substrate by inductively coupled plasma

机译:电感耦合等离子体在预处理聚酰亚胺基底上转移的石墨烯薄膜的电学性质

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In this study, the effects of the pre-treatment of PI films using inductive coupled plasma, according to the gas species, on the electrical properties of a graphene/PI substrate system were investigated. The surface treatment of PI films using inductively coupled O-2, Ar, CH4, and CHF3 plasma was performed. It was found that surface morphology and hydrophobicity are critically important substrate conditions that determine the improvement of the electrical properties of graphene transferred onto the plasma-treated PI substrate. Compared to the electrical properties of untreated PI, the CH4 and CHF3 plasma treated samples showed enhanced electrical conductivity of the graphene devices. However, the electrical conductivities of the PI treated by Ar and O-2 plasma were degraded. CHF3 plasma treatment leads to the sheet resistance of 528 Omega/sq, which is the best result in this experiment. The enhanced electrical properties of the graphene on CHF3- and CH4-treated PI film was attributed to the reduced roughness and the removal of C-O and O-H chemical species by hydrophobization of the PI substrate. The fluorine groups led to a decrease of the surface free energy of the PI films, which resulted in the lowest sheet resistance. (C) 2016 Elsevier Ltd. All rights reserved.
机译:在这项研究中,根据气体种类,研究了使用感应耦合等离子体对PI薄膜进行预处理对石墨烯/ PI衬底系统电学性能的影响。使用感应耦合的O-2,Ar,CH4和CHF3等离子体对PI膜进行表面处理。已经发现,表面形态和疏水性是决定转移到等离子体处理的PI衬底上的石墨烯的电性能的改善的至关重要的衬底条件。与未经处理的PI的电性能相比,CH4和CHF3等离子体处理的样品显示出石墨烯器件的增强的电导率。然而,通过Ar和O-2等离子体处理的PI的电导率降低。 CHF3等离子体处理可导致528 Omega / sq的薄层电阻,这是该实验的最佳结果。石墨烯在CHF3和CH4处理的PI薄膜上增强的电性能归因于PI基板的疏水化处理降低了粗糙度并去除了C-O和O-H化学物种。氟基团导致PI膜的表面自由能降低,从而导致最低的薄层电阻。 (C)2016 Elsevier Ltd.保留所有权利。

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