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Effect of PEG molecular weight on bottom-up filling of copper electrodeposition for PCB interconnects

机译:PEG分子量对PCB互连的电沉积自下而上填充铜的影响

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摘要

The effect of polyethylene glycol (PEG) molecular weight (Mw) upon the microhole filling by Cu electrodeposition was investigated by cross-sectional images using optical microscopy. The bottom-up filling capability of the electroplating bath was increased clearly with an increase in PEG Mw from 600 to 8000 g mol~(-1), and holes with a diameter of 50 μm and aspect ratio of one were filled completely when PEG Mw was higher than 6000 g mol~(-1). The electrochemical study indicated that the polarisation on the cathode was increased with an increase in PEG Mw, and the Cu deposition rate was inhibited. Furthermore, X-ray diffraction analyses showed the crystallography and the peak intensity ratio I(111)/I(200) of plated Cu film were decreased with an increase in PEG Mw. The surface roughness of deposited Cu film was decreased, and a smooth surface was obtained as the PEG Mw increased. The results present PEG-8000 as an inhibitor which is beneficial for microholes filling for high density interconnections printed circuit board.
机译:使用光学显微镜通过横截面图像研究了聚乙二醇(PEG)分子量(Mw)对通过Cu电沉积填充微孔的影响。随着PEG Mw从600增加到8000 g mol〜(-1),电镀液的自下而上填充能力明显提高,当PEG Mw时,直径50μm,长径比为1的孔被完全填充高于6000 g mol〜(-1)。电化学研究表明,阴极极化随着PEG Mw的增加而增加,并且铜的沉积速率受到抑制。此外,X射线衍射分析表明,随着PEG Mw的增加,镀铜膜的峰强度比I(111)/ I(200)降低。所沉积的Cu膜的表面粗糙度降低,并且随着PEG Mw的增加而获得光滑的表面。结果表明PEG-8000作为抑制剂,其对于填充用于高密度互连印刷电路板的微孔是有益的。

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