Propagation Loss Analysis of Ion Implantation Induced Quantum Well Intermixed GaAs/AlGaAs Waveguides

摘要

Propagation losses for semiconductor waveguides formed using a GaAs/AlGaAs superlattice material system have been analyzed. Single-mode 3 mu m wide ridge waveguides, with an etch depth of 1 mu m, have been fabricated using the as-grown and ion implantation induced quantum well intermixed material, which has been exposed to various doses of As2+ ions. The Fabry-Perot technique has been used to study the effect of quantum well intermixing on propagation losses, for which the blue-shift achieved using various doses is used to determine the attenuation. It has been observed in the measured data that the dominant loss mechanism is impurity scattering which is introduced by ion implantation.